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Quality and Value Optimised SSD
Enjoy more accessible terabyte capacity. The SSD 860 QVO gives you huge storage, with solid performance and reliability with exceptional value. This breakthrough was achieved with Samsung’s latest 4-bit MLC V-NAND flash technology. Now's the time to upgrade to the fast SSD you need.
Speed Up to a New Normal
Speed it all up. Up to 550 MB/s read and 520 MB/s write speeds give the experience of a new computer with fast boot-ups, shutdowns, transfers, and application responsiveness. Intelligent TurboWrite accelerates write speeds and maintains long-term high performance with a larger variable buffer.
Trusted Reliability
Always be sure. The SSD 860 QVO is your reliable alternative to legacy storage, built with Samsung V-NAND technology, and backed by a limited warranty of 3 years or up to 1,440 TBW. Samsung has carried out extensive analysis of SSD user patterns in order to ensure a sufficient TBW rating for everyday PC users.
Smart Compatibility
Benefit from faster, more fluid communication with your host system. The refined ECC algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility
Terabyte-level capacity
Ample capacity at fast speed is worth the switch. Terabyte-level capacity on a fast SSD elevates your computing experience. Upgrade from multiple storage solutions to the speed of a single mass-storage SSD to keep your OS, applications and massive data all together.
Samsung Magician
Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.
- Interface
- Serial ATA III
- S.M.A.R.T. support
- Width
- 100 mm
- Depth
- 69.8 mm
- Weight
- 51 g
- Product colour
- Silver
- Security algorithms
- 256-bit AES
- Operating temperature (T-T)
- Power consumption (average)
- 2.2 W
- Power consumption (idle)
- 0.03 W
- Data transfer rate
- 6 Gbit/s
- Memory type
- V-NAND MLC
- Random read (4KB)
- 96000 IOPS
- Random write (4KB)
- 89000 IOPS
- Operating shock
- 1500 G
- Read speed
- 550 MB/s
- Write speed
- 520 MB/s
- Mean time between failures (MTBF)
- 1500000 h
- NVMe
- Component for
- ECC
- Power consumption (max)
- 4 W
- TBW rating
- 1440
- Operating voltage
- 5 V
- Height
- 6.8 mm
- Storage temperature (T-T)
- SSD capacity
- 1000 GB
- SSD form factor
- 2.5"
- Storage relative humidity (H-H)
- 5 - 95%
- TRIM support
- NAND flash type
- MLC (Multi Level Cell)
- Controller type
- Samsung MJX
- DevSlp (device sleep) support
- IEEE 1667
- Active garbage collection
- TCG Opal 2.0
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Esitteet ja oppaat
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| Weight & dimensions | |
|---|---|
| Width | 100 mm |
| Depth | 69.8 mm |
| Height | 6.8 mm |
| Weight | 51 g |
| Power | |
| Operating voltage | 5 V |
| Power consumption (max) | 4 W |
| Power consumption (average) | 2.2 W |
| Power consumption (idle) | 0.03 W |
| Operational conditions | |
| Storage relative humidity (H-H) | 5 - 95% |
| Operating shock | 1500 G |
| Other features | |
| Product colour | Silver |
| Features | |
| SSD form factor | 2.5" |
| SSD capacity | 1000 GB |
| Interface | Serial ATA III |
| Memory type | V-NAND MLC |
| Read speed | 550 MB/s |
| Write speed | 520 MB/s |
| NAND flash type | MLC (Multi Level Cell) |
| Security algorithms | 256-bit AES |
| Data transfer rate | 6 Gbit/s |
| Random read (4KB) | 96000 IOPS |
| Random write (4KB) | 89000 IOPS |
| Controller type | Samsung MJX |
| Mean time between failures (MTBF) | 1500000 h |
| TBW rating | 1440 |
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